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RQA0009SXAQS
Silicon N-Channel MOS FET
REJ03G1566-0100 Rev.1.00 Jul 04, 2007
Features
* High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) * Compact package capable of surface mounting * Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)
Outline
RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK R )
3
3
2
1
1
4
1. Gate 2. Source 3. Drain 4. Source
2, 4
Note:
Marking is "SX". *UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25C Symbol VDSS VGSS ID Pchnote Tch Tstg Ratings 16 5 3.2 15 150 -55 to +150 Unit V V A W C C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 1 of 12
RQA0009SXAQS
Electrical Characteristics
(Ta = 25C)
Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward Transfer Admittance Input capacitance Output capacitance Reverse transfer capacitance Output Power Power Added Efficiency Output Power Power Added Efficiency Symbol IDSS IGSS VGS(off) |yfs| Ciss Coss Crss Pout PAE Pout PAE Min. -- -- 0.15 -- -- -- -- -- -- -- -- -- -- Typ -- -- 0.5 3.2 76 40 3.5 37.8 6.0 65 35.2 3.3 60 Max. 15 2 0.8 -- -- -- -- -- -- -- -- -- -- Unit A A V S pF pF pF dBm W % dBm W % Test Conditions VDS = 16 V, VGS = 0 VGS = 5 V, VDS = 0 VDS = 6 V, ID = 1 mA VDS = 6 V, ID = 1.6 A VGS = 5 V, VDS = 0, f = 1 MHz VDS = 6 V, VGS = 0, f = 1 MHz VDG = 6 V, VGS = 0, f = 1 MHz VDS = 6 V, IDQ = 180 mA f = 520 MHz, Pin = +25 dBm (316 mW) VDS = 4.8 V, IDQ = 300 mA f = 465 MHz, Pin = +17 dBm (50 mW)
Main Characteristics
Maximum Channel Power Dissipation Curve Typical Output Characteristics
4 2.0 V 15 Pulse Test 1.75 V
Channel Power Dissipation Pch (W)
20
Drain Current ID (A)
3 1.5 V 2 1.25 V 1
10
5
VGS = 1.0 V
0
0
50
100
150
200
0
0
2
4
6
8
10
Case Temperature TC (C)
Drain to Source Voltage VDS (V) Forward Transfer Admittance vs. Drain Current
Typical Transfer Characterisitics
Drain Current ID (A) Forward Transfer Admittance |yfs| (S)
4 VDS = 6 V Pulse Test 3 |yfs|
Forward Transfer Admittance |yfs| (S)
10.0 VDS = 6 V Pulse Test
2
ID
1.0
1
0 0 0.5 1.0 1.5 2.0
0.1 0.1
1.0
10.0
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 2 of 12
RQA0009SXAQS
Input Capacitance vs. Gate to Source Voltage
90 1000
Output Capacitance vs. Drain to Source Voltage
Output Capacitance Coss (pF)
Input Capacitance Ciss (pF)
80
70
100
60
50 VDS = 0 f = 1 MHz 40 -5 -4 -3 -2 -1 0 1 2 3 4 5
VGS = 0 f = 1 MHz 10 0.1 1 10
Gate to Source Voltage VGS (V) Reverse Transfer Capacitance vs. Drain to Gate Voltage
100 VGS = 0 f = 1 MHz
Drain to Source Voltage VDS (V)
Reverse Transfer Capacitance Crss (pF)
MSG, MAG vs. Frequency
Maximum Stable Gain MSG (dB) Maximum Available Gain MAG (dB)
30 25 MSG 20 15 MAG 10 5 0 0 500 1000 1500 2000 VDS = 6 V ID = 180 mA
10
1 0.1
1
10
Drain to Gate Voltage VDG (V)
Frequency f (MHz)
REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 3 of 12
RQA0009SXAQS
Evaluation Circuit (f = 520 MHz)
C6 VG R2 C4 C5 C12 C13 VD
C11
R1 L1 L2 L3 C10 50 OUT
50 C1 IN C2 C3 C7
C8
C9
C1, C4, C10, C11 C2 C3 C5, C12 C6, C13 C7 C8 C9 L1 L2 L3 R1 R2
100 pF Chip Capacitor 22 pF Chip Capacitor 5 pF Chip Capacitor 1000 pF Chip Capacitor 1 F Chip Tantalum Capacitor 18 pF Chip Capacitor 10 pF Chip Capacitor 7 pF Chip Capacitor 8 Turns D: 0.5 mm, 2.4 mm Enamel Wire 1 nH Chip Inductor 1.8 nH Chip Inductor 670 Chip Resistor 6.8 k Chip Resistor
REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 4 of 12
RQA0009SXAQS
Output Power, Drain Current vs. Input Power
40 1.6 Pout 1.4 25
Power Gain, Power Added Efficiency vs. Input Power
35 30 25 20 15 10 5 0 0 5
1.2 1.0 ID 0.8 0.6 VDS = 6 V f = 520 MHz IDQ = 180 mA 10 15 20 25 0.4 0.2 0 30
Drain Current ID (A)
20
PG
80
15 PAE 10 VDS = 6 V f = 520 MHz IDQ = 180 mA 0 5 10 15 20 25
60
40
5
20
0
0 30
Input Power Pin (dBm)
Input Power Pin (dBm)
Power Gain, Power Added Efficiency vs. Frequency
Input Return Loss vs. Frequency
Power Added Efficiency PAE (%)
20 PAE 15 PG 10
80
0
60
Input Return Loss RL (dB)
Power Gain PG (dB)
-5
40
-10
5
VDS = 6 V IDQ = 180 mA Pin = 25 dBm 470 490 510 530
20
-15
VDS = 6 V IDQ = 180 mA Pin = 25 dBm 470 490 510 530 550
0 450
0 550
-20 450
Frequency f (MHz)
Frequency f (MHz)
Power Gain, Power Added Efficiency, vs. Drain to Source Voltage
Power Gain, Power Added Efficiency vs. Idling Current
Power Added Efficiency PAE (%)
PAE
15
60
15 PG 10
75
PG 10 50
PAE
70
5
IDQ = 180 mA f = 520 MHz Pin = 25 dBm 4 5 6 7 8 9
40
5
VDS = 6 V f = 520 MHz Pin = 25 dBm 0.1 0.2 0.3 0.4
65
0 3
30
0 0
60 0.5
Drain to Source Voltage VDS (V)
Idling Current IDQ (A)
REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 5 of 12
Power Added Efficiency PAE (%)
20
70
20
80
Power Gain PG (dB)
Power Gain PG (dB)
Power Added Efficiency PAE (%)
100
Pout (dBm)
Output Power
Power Gain PG (dB)
RQA0009SXAQS
Evaluation Circuit (f = 465 MHz)
C7 VG C6 C13 C14 VD
R2 C5 L3 L1 L2 C11 50 RFOUT C2 C3 C4 C8 C9 C10
C12
R1 50 C1 RFIN
C1, C5, C11, C12 C2, C8 C3 C4, C9, C10 C6, C13 C7, C14 L1 L2 L3 R1 R2
100 pF Chip Capacitor 22 pF Chip Capacitor 15 pF Chip Capacitor 10 pF Chip Capacitor 2200 pF Chip Capacitor 1 F / 35 V Chip Tantalum Capacitor 1 nH Chip Inductor 1.8 nH Chip Inductor 8 Turns D: 0.5 mm, 2.4 mm Enamel Wire 670 Chip Resistor 6.8 k Chip Resistor
REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 6 of 12
RQA0009SXAQS
Output Power, Drain Current vs. Input Power
40 1.6 1.4 1.2 ID 1.0 0.8 0.6 VDS = 4.8 V IDQ = 300 mA f = 465 MHz 0 5 10 15 20 25 0.4 0.2 0 30 0 0 5 10 15 20 25 25 PG
Power Gain, Power Added Efficiency vs. Input Power
Output Power Pout (dBm)
35 30 25 20 15 10 5 0 Pout
Drain Current ID (A)
20
80
15
60
10
PAE VDS = 4.8 V IDQ = 300 mA f = 465 MHz
40
5
20
0 30
Input Power Pin (dBm)
Input Power Pin (dBm)
Power Gain, Power Added Efficiency vs. Frequency
Input Return Loss vs. Frequency
Power Added Efficiency PAE (%)
20
80
0
Input Return Loss RL (dB)
Power Gain PG (dB)
-5 -10 -15 -20 -25 -30 450 VDS = 4.8 V IDQ = 300 mA Pin = 17 dBm 455 460 465 470 475 480
19 PAE 18
70
PG
60
17
VDS = 4.8 V IDQ = 300 mA Pin = 17 dBm 455 460 465 470 475
50
16 450
40 480
Frequency f (MHz)
Frequency f (MHz)
Power Gain, Power Added Efficiency, vs. Drain to Source Voltage
Power Gain, Power Added Efficiency vs. Idling Current
Power Added Efficiency PAE (%)
PG
19 PAE 18 17 16 15 IDQ = 300 mA f = 465 MHz Pin = 17 dBm 3 4 5 6 7 8
60 55 50 45 40
Power Gain PG (dB)
Power Gain PG (dB)
20
65
20 19 18 17 16 15 0
PAE
65 60
PG
55 50 VDS = 4.8 V f = 465 MHz Pin = 17 dBm 45 40 0.5
0.1
0.2
0.3
0.4
Drain to Source Voltage VDS (V)
Idling Current IDQ (A)
REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 7 of 12
Power Added Efficiency PAE (%)
21
70
21
70
Power Added Efficiency PAE (%)
100
Power Gain PG (dB)
RQA0009SXAQS
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 -5 -4 180 0 150 30 1 1.5 2
S21 Parameter vs. Frequency
90 120
Scale: 5 / div.
60
-150
-30
Test condition: VDS = 6 V, IDQ = 180 mA, ZO = 50 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step)
Test condition: VDS = 6 V, IDQ = 180 mA, ZO = 50 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step)
S12 Parameter vs. Frequency
90 120
S22 Parameter vs. Frequency
.8 .6 .4 3 1 1.5 2
Scale: 0.01 / div.
60
150
30 .2
4 5 10
180
0
0
.2
.4
.6 .8 1
1.5 2
3 45
10 -10
-.2 -150 -30 -3 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1
-5 -4
Test condition: VDS = 6 V, IDQ = 180 mA, ZO = 50 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step)
Test condition: VDS = 6 V, IDQ = 180 mA, ZO = 50 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step)
REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 8 of 12
RQA0009SXAQS
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 -5 -4 180 0 150 30 1 1.5 2
S21 Parameter vs. Frequency
90 120
Scale: 5 / div.
60
-150
-30
Test condition: VDS = 4.8 V, IDQ = 300 mA, ZO = 50 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step)
Test condition: VDS = 4.8 V, IDQ = 300 mA, ZO = 50 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step)
S12 Parameter vs. Frequency
90 120
S22 Parameter vs. Frequency
.8 .6 .4 3 1 1.5 2
Scale: 0.01 / div.
60
150
30 .2
4 5 10
180
0
0
.2
.4
.6 .8 1
1.5 2
3 45
10 -10
-.2 -150 -30 -3 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1
-5 -4
Test condition: VDS = 4.8 V, IDQ = 300 mA, ZO = 50 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step)
Test condition: VDS = 4.8 V, IDQ = 300 mA, ZO = 50 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step)
REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 9 of 12
RQA0009SXAQS
S Parameter
(VDS = 6 V, IDQ = 180 mA, Zo = 50 )
f (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 S11 MAG ANG (deg.) 0.868 0.861 0.882 0.892 0.899 0.910 0.918 0.926 0.932 0.936 0.940 0.941 0.944 0.945 0.944 0.944 0.943 0.943 0.946 0.949 0.951 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.953 0.958 0.965 0.963 0.956 0.950 0.944 0.936 0.932 0.932 0.929 0.923 0.917 -154.0 -159.4 -163.9 -166.8 -169.5 -171.6 -173.4 -175.2 -176.8 -178.2 -179.5 179.2 178.1 176.9 175.9 174.6 173.4 172.3 171.1 170.2 169.4 168.7 167.8 167.0 166.2 165.4 164.6 164.0 163.3 162.1 160.8 159.7 158.5 157.3 156.4 155.7 154.7 153.9 153.6 153.3 152.9 152.2 151.6 150.7 149.3 148.1 147.3 146.3 144.9 S21 MAG ANG (deg.) 9.85 5.42 3.64 2.64 2.06 1.61 1.28 1.04 0.84 0.73 0.62 0.54 0.45 0.41 0.37 0.31 0.30 0.26 0.23 0.22 0.21 0.18 0.18 0.16 0.14 0.14 0.13 0.12 0.11 0.11 0.10 0.10 0.09 0.08 0.08 0.08 0.07 0.07 0.07 0.07 0.06 0.06 0.06 0.06 0.05 0.05 0.05 0.05 0.05 88.8 77.2 68.2 58.5 51.8 45.1 40.3 36.0 31.8 28.8 26.4 23.1 20.2 18.3 16.4 13.9 12.1 10.6 8.6 7.3 6.5 5.3 4.3 3.7 2.2 1.3 0.8 0.1 -0.8 -1.8 -2.7 -3.6 -4.5 -4.7 -5.0 -4.7 -4.9 -5.2 -4.6 -4.9 -4.2 -3.5 -3.8 -3.5 -3.4 -3.6 -3.0 -3.6 -3.0 S12 MAG ANG (deg.) 0.019 0.018 0.016 0.016 0.014 0.013 0.013 0.011 0.010 0.009 0.008 0.007 0.006 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.004 0.004 0.004 0.005 0.005 0.006 0.006 0.007 0.008 0.008 0.009 0.009 0.010 0.010 0.011 0.011 0.012 0.012 0.013 0.013 0.014 0.014 0.015 0.015 0.016 0.016 0.017 0.017 0.017 1.2 -6.3 -14.1 -19.2 -22.1 -27.2 -29.3 -34.1 -33.1 -34.5 -34.6 -36.5 -32.7 -32.0 -25.3 -22.3 -15.2 0.3 9.1 20.6 36.9 40.3 52.0 53.2 56.8 60.9 64.0 62.2 65.4 65.9 65.6 65.9 66.6 66.2 66.5 66.5 67.0 67.0 65.5 65.4 65.3 65.2 63.9 63.9 63.0 62.8 63.0 61.3 61.8 S22 MAG ANG (deg.) 0.706 0.725 0.755 0.768 0.792 0.805 0.827 0.840 0.855 0.869 0.880 0.892 0.901 0.906 0.915 0.919 0.929 0.930 0.936 0.940 0.943 0.944 0.950 0.951 0.949 0.956 0.958 0.957 0.956 0.959 0.960 0.960 0.962 0.967 0.968 0.965 0.967 0.976 0.972 0.972 0.976 0.981 0.977 0.977 0.978 0.981 0.977 0.977 0.980 -166.8 -168.9 -170.6 -170.6 -171.2 -171.5 -172.2 -173.1 -173.8 -174.6 -175.6 -176.5 -177.3 -178.0 -179.4 180.0 178.9 178.1 177.2 176.5 175.5 174.7 174.1 173.3 172.6 171.7 171.0 170.3 169.5 168.5 168.2 167.4 166.4 165.8 165.3 164.5 163.7 163.2 162.9 161.9 161.0 160.7 160.1 159.5 158.9 158.4 158.0 157.2 156.8
REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 10 of 12
RQA0009SXAQS
S Parameter
(VDS = 4.8 V, IDQ = 300 mA, Zo = 50 )
f (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 S11 MAG ANG (deg.) 0.772 0.794 0.812 0.818 0.824 0.831 0.836 0.841 0.848 0.851 0.851 0.852 0.854 0.858 0.865 0.873 0.878 0.880 0.882 0.886 0.889 0.893 0.898 0.902 0.901 0.902 0.904 0.907 0.904 0.905 0.912 0.915 0.919 0.926 0.938 0.942 0.942 0.945 0.946 0.942 0.939 0.940 0.942 0.939 0.937 0.937 0.935 0.932 0.931 -157.0 -162.8 -167.3 -170.4 -173.1 -175.0 -176.6 -178.3 -179.9 179.0 177.7 176.3 174.7 173.3 171.9 170.8 169.8 168.8 167.7 166.5 165.5 164.4 163.3 162.4 161.3 160.0 158.7 157.7 156.5 155.1 153.8 152.8 151.5 149.9 148.8 147.9 146.7 145.5 144.7 143.7 142.3 140.9 139.8 138.3 136.8 135.4 134.1 132.8 131.3 S21 MAG ANG (deg.) 9.63 5.54 3.91 2.98 2.36 1.92 1.60 1.36 1.15 1.00 0.87 0.77 0.69 0.60 0.54 0.49 0.45 0.41 0.37 0.35 0.32 0.29 0.27 0.26 0.23 0.22 0.21 0.19 0.18 0.17 0.16 0.15 0.14 0.14 0.13 0.13 0.12 0.11 0.11 0.11 0.10 0.10 0.09 0.09 0.08 0.08 0.08 0.07 0.07 88.9 79.0 71.6 64.7 59.1 53.6 48.7 44.8 40.5 37.1 33.9 30.7 27.9 24.8 22.3 20.2 17.9 16.1 14.2 12.4 10.7 8.9 7.5 6.2 4.7 3.3 1.8 0.4 -0.8 -2.4 -3.1 -4.2 -5.8 -6.8 -7.8 -8.6 -9.3 -10.2 -10.6 -11.2 -11.8 -12.5 -13.3 -14.3 -15.3 -16.3 -17.5 -18.1 -18.7 S12 MAG ANG (deg.) 0.013 0.013 0.012 0.011 0.011 0.011 0.010 0.009 0.008 0.008 0.007 0.006 0.006 0.005 0.005 0.005 0.004 0.004 0.004 0.004 0.004 0.004 0.004 0.005 0.005 0.005 0.006 0.006 0.007 0.007 0.007 0.008 0.008 0.009 0.009 0.010 0.010 0.010 0.011 0.011 0.012 0.012 0.012 0.013 0.013 0.014 0.014 0.014 0.014 -1.0 -6.3 -11.1 -13.5 -15.2 -20.4 -21.4 -23.3 -22.9 -22.2 -24.8 -24.2 -20.5 -18.2 -15.1 -12.2 -1.7 4.3 11.2 21.6 29.8 33.2 40.9 46.7 50.8 54.5 57.8 55.3 60.5 62.1 61.1 64.3 63.2 62.7 63.0 62.6 61.9 63.8 62.4 62.2 61.2 62.0 61.3 59.2 59.6 59.8 58.9 57.9 57.7 S22 MAG ANG (deg.) 0.776 0.784 0.799 0.805 0.818 0.824 0.837 0.843 0.859 0.868 0.874 0.887 0.896 0.901 0.905 0.911 0.918 0.922 0.932 0.931 0.935 0.939 0.944 0.943 0.948 0.948 0.954 0.954 0.953 0.958 0.959 0.956 0.958 0.964 0.965 0.963 0.965 0.968 0.965 0.969 0.973 0.974 0.974 0.974 0.976 0.977 0.972 0.975 0.977 -172.1 -173.8 -174.8 -174.8 -175.0 -175.1 -175.4 -175.8 -176.8 -177.1 -177.4 -177.8 -178.8 -179.1 -179.8 179.5 178.9 178.3 177.8 177.1 176.5 175.8 175.1 174.6 174.1 173.4 173.1 172.5 171.6 171.0 170.7 170.4 169.3 168.9 168.4 167.8 167.0 166.6 166.3 165.5 164.9 164.6 164.2 163.4 163.0 162.9 162.0 161.5 161.2
REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 11 of 12
RQA0009SXAQS
Package Dimensions
JEITA Package Code SC-62 RENESAS Code
PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g
Unit: mm
4.5 0.1
1.5 1.5 3.0
Ordering Information
Part Name RQA0009SXTL-E Quantity 1000 pcs. Shipping Container 178 mm reel, 12 mm emboss taping
REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 12 of 12
0.8 Min
0.44 Max
(0.4)
0.53 Max 0.48 Max
(2.5)
1
2.5 0.1 4.25 Max
0.4
1.8 Max
1.5 0.1 0.44 Max
(1.5)
(0.2)
Sales Strategic Planning Div.
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In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
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